Triode/MOS tube/transistor/module
VISHAY (Vishay)
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ST (STMicroelectronics)
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Infineon (Infineon)
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AGM-Semi (core control source)
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TMC (Taiwan Mao)
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Type N VDS(V) 60V VGS(V) ±20V Vth(V) 3V RDS(ON)(mΩ) 7.5mΩ ID(A) 80A
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VBsemi (Wei Bi)
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Tokmas (Tokmas)
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P-channel MOS -40V -13A 11 milliohms
Descripción
CJ (Jiangsu Changdian/Changjing)
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PJSEMI (flat crystal micro)
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Continuous drain current (Id) (at 25°C): 5.5A, drain-source voltage (Vdss): 20V, gate-source threshold voltage: 0.45~1V@ 250uA, drain-source on-resistance: <28mΩ @Vgs= 4.5V <35mΩ @Vgs=2.5V, maximum power dissipation (Ta=25°C): 1W, type: 5.5A/20V Nch
Descripción
CJ (Jiangsu Changdian/Changjing)
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LONTEN (Longteng Semiconductor)
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LONTEN (Longteng Semiconductor)
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ST (STMicroelectronics)
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onsemi (Ansemi)
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N-channel, 900V, 2.2A, 7.2Ω@10V
Descripción
SPTECH (Shenzhen Quality Super)
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Infineon (Infineon)
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DIODES (US and Taiwan)
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ST (STMicroelectronics)
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SPTECH (Shenzhen Quality Super)
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