Triode/MOS tube/transistor/module
VBsemi (Wei Bi)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
CJ (Jiangsu Changdian/Changjing)
Fabricantes
PNP, Vceo=160V, Ic=1A
Descripción
CRMICRO (China Resources Micro)
Fabricantes
DIODES (US and Taiwan)
Fabricantes
LONTEN (Longteng Semiconductor)
Fabricantes
LRC (Leshan Radio)
Fabricantes
PNP, Vceo=50V, Ic=150mA
Descripción
SPTECH (Shenzhen Quality Super)
Fabricantes
APM (Jonway Microelectronics)
Fabricantes
ST (STMicroelectronics)
Fabricantes
VISHAY (Vishay)
Fabricantes
NCE (Wuxi New Clean Energy)
Fabricantes
BLUE ROCKET (blue arrow)
Fabricantes
Hottech (Heketai)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
Infineon (Infineon)
Fabricantes
onsemi (Ansemi)
Fabricantes
This N-Channel MV MOSFET is produced using ON Semiconductor's advanced Power Trench process which incorporates Shielded Gate technology. This process has been optimized to minimize on-resistance while maintaining excellent switching performance with the industry's best soft body diode.
Descripción