Triode/MOS tube/transistor/module

This N-channel MOSFET is produced using the advanced PowerTrench process, which is specially adapted to minimize on-resistance. This device is ideal for applications requiring ultra-low rDS(on) in a small space, such as high-performance VRM, POL, and Oring functions.

The 2N7002DW is a dual N-channel MOSFET with low on-resistance and low gate threshold voltage. It also has high switching speed, and ultra-small surface mount encapsulation, so it is suitable for many different applications.

N-channel, 20V, 4.2A, 30mΩ@4.5V