Triode/MOS tube/transistor/module
CJ (Jiangsu Changdian/Changjing)
Fabricantes
PNP transistor H file (200-350) 500mA
Descripción
MOSFET Type N Drain-Source Voltage (Vdss) (V) 30 Threshold Voltage VGS ±20 Vth(V) 1-2.5 On-Resistance RDS(ON) (mΩ) 16/20 Continuous Drain Current ID (A) 20
Descripción
VBsemi (Wei Bi)
Fabricantes
TECH PUBLIC (Taizhou)
Fabricantes
Cmos (Guangdong Field Effect Semiconductor)
Fabricantes
SHIKUES (Shike)
Fabricantes
The original factory changed the model, and the performance is exactly the same. The corresponding old model is: FDN340P
Descripción
NPN Vceo=80V Ic=4A PC=25W
Descripción
VBsemi (Wei Bi)
Fabricantes
NCE (Wuxi New Clean Energy)
Fabricantes
onsemi (Ansemi)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
DIODES (US and Taiwan)
Fabricantes
Regent Energy
Fabricantes
DIODES (US and Taiwan)
Fabricantes
HUASHUO (Huashuo)
Fabricantes
Leiditech (Lei Mao Electronics)
Fabricantes