Triode/MOS tube/transistor/module
APM (Jonway Microelectronics)
Fabricantes
Shanghai Chaozhi
Fabricantes
LRC (Leshan Radio)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
HUAYI (Hua Yi Wei)
Fabricantes
NPN, Vceo=12V, Ic=100mA, hfe=125~250
Descripción
LRC (Leshan Radio)
Fabricantes
TECH PUBLIC (Taizhou)
Fabricantes
Infineon (Infineon)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
Infineon (Infineon)
Fabricantes
JSMSEMI (Jiesheng Micro)
Fabricantes
Type: N-channel Drain-source voltage (Vdss): 800V Continuous drain current (Id): 7.8A Power (Pd): 190W On-resistance (RDS(on)@Vgs,Id): 1.2Ω@10V, 4.7A
Descripción
LONTEN (Longteng Semiconductor)
Fabricantes
LANKE (Lanke)
Fabricantes
CJ (Jiangsu Changdian/Changjing)
Fabricantes
80V, 1A NPN medium power transistor, reference magnification: 100~250
Descripción