Triode/MOS tube/transistor/module

P channel -60V -12A

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NPN

Low saturation voltage bipolar transistors are miniature surface mount devices with ultra-low saturation voltage and high current gain capability. These devices are designed for low-voltage, high-speed switching applications that require cost-effective, efficient energy control.

NPN 160W 130V 15A Applications: Designed for audio and general purpose applications

MOSFET Type N Drain-Source Voltage (Vdss) (V) 40 Threshold Voltage VGS ±20 Vth(V) 1-2.2 On-Resistance RDS(ON) (mΩ) 5.0/5.9 Continuous Drain Current ID (A) 65

This dual NPN bipolar transistor is suitable for general purpose amplifier applications. The device features SOT-563 encapsulation and is suitable for low power surface mount applications where board space is at a premium.

N channel

MOSFET Type N Drain-Source Voltage (Vdss) (V) 30 Threshold Voltage VGS ±20 Vth(V) 1-3 On-Resistance RDS(ON) (mΩ) 3.6/4.2 Continuous Drain Current ID (A) 80