Triode/MOS tube/transistor/module

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Configuration Single Type N-Ch VDS(V) 20 VGS(V) 10 ID(A)Max. 11 VGS(th)(v) 0.7 RDS(ON)(m?)@4.133V 9.5 Qg(nC)@4.5V 16 QgS(nC) 1.3 Qgd(nC) 1.6 Ciss(pF) 1177 Coss(pF) 157 Crss(pF) 138

N-channel 100V 32A

N channel

ON Semiconductor's new Field Stop Generation 3 IGBT series utilizes a new field stop IGBT technology that offers superior conduction and switching performance, as well as easy parallel operation. The device is ideal for resonant or soft switching applications such as induction heating and microwave ovens.

Collector-base reverse breakdown voltage 700V, collector-emitter reverse breakdown voltage 400V, amplification factor 8-40, collector current IC8A

N-Channel, PowerTrench MOSFET, 80V, 300A, 1.4mΩ

N-channel 30V 0.85A

MOS tube, DFN-8 5*6, N channel, withstand voltage: 600V, current: 11A, 10V internal resistance (Max): 420mΩ

VCES(V) 650 IC(A)@151℃ 60 VCE(sat)(V) 1.85 E(off)(mj) 0.89 Vf(V) 2