Triode/MOS tube/transistor/module

N-channel 30V 150A

P-channel, -30V, -20A, 4.6mΩ@-10V

Type: N-Channel Drain-Source Voltage (Vdss): 40V Continuous Drain Current (Id): 170A Power (Pd): 250W On-Resistance (RDS(on)@Vgs,Id): 2.6mΩ@10V,40A Threshold Voltage (Vgs(th)@Id): 1.7V@250uA Gate Charge (Qg@Vgs): 73nC@20V Input Capacitance (Ciss@Vds): 4.14nF@20V Operating Temperature: -55℃~+150℃@(Tj )

Continuous drain current (Id) (at 25°C): 2A, drain-source voltage (Vdss): 60V, gate-source threshold voltage: 1~2V@ 250uA, drain-source on-resistance: <85mΩ @Vgs=10V <120mΩ @Vgs=4.5V, Maximum Power Dissipation (Ta=25°C): 0.9W, Type: 2A/60V Nch

Transistor/2SC2688 bagged

P-channel, -30V, -11.2A, 13mΩ@10V

MOS tube, DFN-8 5*6, N channel, withstand voltage: 700V, current: 6A

Automotive power MOSFETs. -20V, -1A, 180mΩ, Single P-Channel, SOT-23 AEC-Q101 Qualified MOSFET, Production Part Approval Process (PPAP) Qualified for Automotive Applications.

N-channel, 150V, 25.4A, 74mΩ@10V