Triode/MOS tube/transistor/module
HUASHUO (Huashuo)
Fabricantes
ST (STMicroelectronics)
Fabricantes
WPMtek (Wei Panwei)
Fabricantes
DIODES (US and Taiwan)
Fabricantes
APM (Jonway Microelectronics)
Fabricantes
CBI (Creation Foundation)
Fabricantes
Cmos (Guangdong Field Effect Semiconductor)
Fabricantes
TECH PUBLIC (Taizhou)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
YANGJIE (Yang Jie)
Fabricantes
MMBT3906T-F2-0000HF
Descripción
DIODES (US and Taiwan)
Fabricantes
Ruichips (Ruijun Semiconductor)
Fabricantes
onsemi (Ansemi)
Fabricantes
This N-channel MOSFET is produced using the advanced PowerTrench process, which is specially adapted to minimize on-resistance while maintaining excellent switching performance.
Descripción
Dual NPN, Vceo=50V, Ic=100mA
Descripción