Triode/MOS tube/transistor/module
NCE (Wuxi New Clean Energy)
Fabricantes
DIODES (US and Taiwan)
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HUASHUO (Huashuo)
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TOSHIBA (Toshiba)
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TWGMC (Taiwan Dijia)
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Transistor type: NPN Collector-emitter breakdown voltage (Vceo): 45V Collector current (Ic): 1A Power (Pd): 1.3W DC current gain (hFE@Ic,Vce): 63@150mA, 2V
Descripción
Infineon (Infineon)
Fabricantes
RF Transistor NPN
Descripción
HUASHUO (Huashuo)
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APM (Jonway Microelectronics)
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P channel -30V -6A
Descripción
VBsemi (Wei Bi)
Fabricantes
DIODES (US and Taiwan)
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RENESAS (Renesas)/IDT
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N-channel, 60V, 25A
Descripción
TECH PUBLIC (Taizhou)
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TECH PUBLIC (Taizhou)
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TECH PUBLIC (Taizhou)
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TECH PUBLIC (Taizhou)
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TECH PUBLIC (Taizhou)
Fabricantes
TECH PUBLIC (Taizhou)
Fabricantes