Triode/MOS tube/transistor/module
Type: P-Channel Drain-Source Voltage (Vdss): 30V Continuous Drain Current (Id): 4.1A Power (Pd): 1.4W On-Resistance (RDS(on)@Vgs,Id): 60Ω@10V, 2.8A Threshold voltage (Vgs(th)@Id): 1.2V@250μA
Descripción
DIODES (US and Taiwan)
Fabricantes
SILAN (Silan Micro)
Fabricantes
N-channel, 800V, 7A, 1.55Ω@10V
Descripción
HXY MOSFET (Huaxuanyang Electronics)
Fabricantes
Samwin (Semipower)
Fabricantes
LRC (Leshan Radio)
Fabricantes
LRC (Leshan Radio)
Fabricantes
DIODES (US and Taiwan)
Fabricantes
Infineon (Infineon)
Fabricantes
DIODES (US and Taiwan)
Fabricantes
YFW (You Feng Wei)
Fabricantes
JSMSEMI (Jiesheng Micro)
Fabricantes
onsemi (Ansemi)
Fabricantes
This family of digital transistors is intended to replace a device and its external resistor bias network. The Bias Resistor Transistor (BRT) consists of a transistor and a monolithic bias network consisting of two resistors; a series base resistor and a base emitter resistor. The BRT eliminates the need for these separate components, which are integrated into a single device. Using BRT can reduce system cost and save board space.
Descripción
Cmos (Guangdong Field Effect Semiconductor)
Fabricantes
TECH PUBLIC (Taizhou)
Fabricantes
PUOLOP (Dipu)
Fabricantes
ST (STMicroelectronics)
Fabricantes