Triode/MOS tube/transistor/module
ST (STMicroelectronics)
Fabricantes
N-channel, 600V, 11A, 360mΩ@10V
Descripción
PNP, Vceo=30V, Ic=3A
Descripción
Agertech (Agertech)
Fabricantes
PANJIT (Qiangmao)
Fabricantes
NPN 40V 200mA
Descripción
HUAYI (Hua Yi Wei)
Fabricantes
N-channel 80V/200A/2.9 milliohms
Descripción
VISHAY (Vishay)
Fabricantes
N-channel, 1000V, 3.1A, 5Ω@10V
Descripción
CJ (Jiangsu Changdian/Changjing)
Fabricantes
JJW (Jiejiewei)
Fabricantes
DIODES (US and Taiwan)
Fabricantes
NPN, Vceo=18V, Ic=1A
Descripción
ElecSuper (Jingxin Micro)
Fabricantes
onsemi (Ansemi)
Fabricantes
Cmos (Guangdong Field Effect Semiconductor)
Fabricantes
DIODES (US and Taiwan)
Fabricantes
Cmos (Guangdong Field Effect Semiconductor)
Fabricantes
onsemi (Ansemi)
Fabricantes
Cmos (Guangdong Field Effect Semiconductor)
Fabricantes
MOS, TO-252-4L, N+P channel, 30V, 12A, 16mΩ (Max), 25W
Descripción
Cmos (Guangdong Field Effect Semiconductor)
Fabricantes
MOS, TO-252-4L, N+P channel, 30V, 12A, 16mΩ (Max), 25W
Descripción