Triode/MOS tube/transistor/module

NPN, Vceo=30V, Ic=600mA, hfe=200~800

SUPERFET III MOSFETs are ON Semiconductor's new family of high-voltage super-junction (SJ) MOSFETs utilizing charge-balancing technology to achieve exceptionally low on-resistance and superior performance in terms of lower gate charge. This advanced process is specifically designed to minimize conduction losses, provide excellent switching performance, and can withstand extreme dv/dt rates. Therefore, the SUPERFET III MOSFET Easy drive family helps manage EMI issues for easier design implementation.

PMOS, -30V -4.2A, RDS(ON)<72mΩ@VGS=-4.5V

N channel

This 60V P-channel MOSFET is produced using Fairchild Semiconductor's high voltage trench process. This product is ideal for power management applications.

NPN