Triode/MOS tube/transistor/module
FOSAN (Fuxin)
Fabricantes
Infineon (Infineon)
Fabricantes
DIODES (US and Taiwan)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
ASM (Saiteng Micro)
Fabricantes
Automotive grade P-type MOS, -60V, -35A
Descripción
VBsemi (Wei Bi)
Fabricantes
NCE (Wuxi New Clean Energy)
Fabricantes
UMW (Friends Taiwan Semiconductor)
Fabricantes
Prisemi (core guide)
Fabricantes
N-channel, 20V, 3A, 43mΩ@4.5V
Descripción
NCE (Wuxi New Clean Energy)
Fabricantes
CYSTECH (Quan Yuxin)
Fabricantes
100V/3.3A N-channel
Descripción
VBsemi (Wei Bi)
Fabricantes
Infineon (Infineon)
Fabricantes
Ascend (Ansend)
Fabricantes
P-type MOS tube@@VDS-30V,ID-100A,RDS(on),Typ@VGS=10V5mR
Descripción
DIODES (US and Taiwan)
Fabricantes
Dual PNP, Vceo=-65V, Ic=-100mA
Descripción
onsemi (Ansemi)
Fabricantes
These N and P-channel MOSFETs are produced using the advanced PowerTrench process, which is specially adapted to minimize on-resistance while maintaining excellent switching performance. Suitable for applications where more expensive SO-8 and TSSOP-8 encapsulations are not possible, these devices offer superior power dissipation in a very small footprint.
Descripción
VBsemi (Wei Bi)
Fabricantes