Triode/MOS tube/transistor/module
DIODES (US and Taiwan)
Fabricantes
DIODES (US and Taiwan)
Fabricantes
LRC (Leshan Radio)
Fabricantes
RealChip (Shenxin Semiconductor)
Fabricantes
Cmos (Guangdong Field Effect Semiconductor)
Fabricantes
MOS, DFN-8 3.3*3.3, N-channel, 30V, 30A, 7mΩ (Max), 25W
Descripción
Infineon (Infineon)
Fabricantes
PJSEMI (flat crystal micro)
Fabricantes
P channel -20V -4A
Descripción
DIODES (US and Taiwan)
Fabricantes
LONTEN (Longteng Semiconductor)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
N-channel, 20V, 6A, 28mΩ@4.5V
Descripción
WINSOK (Weishuo)
Fabricantes
Configuration Dual Type P-Ch VDS(V) -30 VGS(V) 20 ID(A)Max. -8 VGS(th)(v) -1.4 RDS(ON)(m?)@4.321V 18.5 Qg(nC) @4.5V 12 QgS(nC) 5.9 Qgd(nC) 4.7 Ciss(pF) 1025 Coss(pF) 209 Crss(pF) 158
Descripción
onsemi (Ansemi)
Fabricantes
ON Semiconductor's Field Stop IGBTs are a new field stop IGBT technology that provides superior performance in applications such as solar inverters, UPS, welding machines, microwave ovens, telecom, ESS, and PFC where low conduction and switching losses are critical.
Descripción
VBsemi (Wei Bi)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
LGE (Lu Guang)
Fabricantes
Infineon (Infineon)
Fabricantes
NCE (Wuxi New Clean Energy)
Fabricantes
ST (STMicroelectronics)
Fabricantes
N-channel, 100V, 45A, 18Ω@10V
Descripción
onsemi (Ansemi)
Fabricantes