Triode/MOS tube/transistor/module
TECH PUBLIC (Taizhou)
Fabricantes
ElecSuper (Jingxin Micro)
Fabricantes
ST (STMicroelectronics)
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DIODES (US and Taiwan)
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ST (STMicroelectronics)
Fabricantes
N-channel, 600V, 20A, 165mΩ@10V
Descripción
VBsemi (Wei Bi)
Fabricantes
YANGJIE (Yang Jie)
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APEC (Fuding)
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Sinopower (large and medium)
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Sinopower (large and medium)
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MSKSEMI (Mesenco)
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Transistor Type: PNP Collector-Emitter Breakdown Voltage (Vceo): -25V Collector Current (Ic): -500mA Power (Pd): 300mW Collector Cutoff Current (Icbo): 100nA Collector-Emitter Saturation Voltage (VCE( sat)@Ic,Ib): 600mV@500mA HFE: 200-350
Descripción
onsemi (Ansemi)
Fabricantes
This 8A 80 V NPN Darlington bipolar power transistor is suitable for general purpose amplifiers and low speed switching applications.
Descripción
GOODWORK (Good Work)
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TWGMC (Taiwan Dijia)
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Transistor type: 1 NPN-pre-biased Power (Pd): 200mW Collector current (Ic): 100mA Collector-emitter breakdown voltage (Vceo): 50V NPN, Vcc=50V, Io=100mA, Pd=200mW
Descripción
VISHAY (Vishay)
Fabricantes
DIODES (US and Taiwan)
Fabricantes
BLUE ROCKET (blue arrow)
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CJ (Jiangsu Changdian/Changjing)
Fabricantes
NPN, Vceo=25V, Ic=500mA, silk screen: J3
Descripción
Infineon (Infineon)
Fabricantes