Triode/MOS tube/transistor/module
P-channel, 30V, 3.2A, 78mΩ@10V
Descripción
APM (Jonway Microelectronics)
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VBsemi (Wei Bi)
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CJ (Jiangsu Changdian/Changjing)
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NPN, Vceo=30V, Ic=20mA, hfe=100~200, silk screen QY
Descripción
WINSOK (Weishuo)
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VBsemi (Wei Bi)
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JSMSEMI (Jiesheng Micro)
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Transistor type: NPN Collector-emitter breakdown voltage (Vceo): 65V Collector current (Ic): 100mA Power (Pd): 200mW 200~450 NPN, Vceo=65V, Ic=0.1
Descripción
DIODES (US and Taiwan)
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PUOLOP (Dipu)
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DIODES (US and Taiwan)
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PNP transistor + N channel MOSFET
Descripción
NCE (Wuxi New Clean Energy)
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NMOS, 75V/210A, RDS(ON)=3mR; the nominal 48V battery is dedicated for brushless controllers (for electric picks, high cost performance).
Descripción
onsemi (Ansemi)
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This N-channel MOSFET is produced using the advanced PowerTrench process incorporating shielded gate technology. This process is optimized to minimize on-resistance while maintaining excellent switching performance.
Descripción
Cmos (Guangdong Field Effect Semiconductor)
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MOS, TO-252, N-channel, 30V, 70A, 4mΩ (Max), 65W
Descripción
NCE (Wuxi New Clean Energy)
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VBsemi (Wei Bi)
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VBsemi (Wei Bi)
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SPTECH (Shenzhen Quality Super)
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KY (Han Kyung Won)
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