Triode/MOS tube/transistor/module
ST (STMicroelectronics)
Fabricantes
ST (STMicroelectronics)
Fabricantes
SPTECH (Shenzhen Quality Super)
Fabricantes
Cmos (Guangdong Field Effect Semiconductor)
Fabricantes
Infineon (Infineon)
Fabricantes
N-channel, 30V, 161A, 4mΩ@4.5V
Descripción
Infineon (Infineon)
Fabricantes
N-channel, Vdss=30V
Descripción
YANGJIE (Yang Jie)
Fabricantes
YJD45P03A-F1-0000HF
Descripción
SHIKUES (Shike)
Fabricantes
FOSAN (Fuxin)
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DIODES (US and Taiwan)
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luxin-semi (Shanghai Luxin)
Fabricantes
VCES(V) 1200 IC(A)@124℃ 40 VCE(sat)(V) 1.75 E(off)(mj) 1.5 Vf(V) 1.2
Descripción
onsemi (Ansemi)
Fabricantes
The FSB50550AT is an advanced power module for motion control based on Fast Recovery MOSFET (FRFET) technology and can be used as a compact inverter solution for low power motor drive applications such as fans and pumps. The FSB50550AT consists of six FRFET MOSFETs, three half-bridge gate driver HVICs with temperature sensing, and three bootstrap diodes in a compact encapsulation, fully isolated and optimized for thermal performance. The FSB50550AT has optimized switching speed and reduced parasitic inductance, resulting in low Electromagnetic Interference (EMI) characteristics. Since the FSB50550AT uses MOSFETs as the power switches, it offers greater robustness and a larger safe operating area (SOA) than IGBT-based power modules. The FSB50550AT solution is suitable for compact and reliable inverter designs where assembly space is limited.
Descripción
Infineon (Infineon)
Fabricantes
P-channel, 30V, 70A, 6.8mΩ@10V
Descripción
VBsemi (Wei Bi)
Fabricantes
LYG (Lingyan Pavilion)
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TOSHIBA (Toshiba)
Fabricantes
NPN, Vceo=50V, Ic=150mA
Descripción
YANGJIE (Yang Jie)
Fabricantes
RealChip (Shenxin Semiconductor)
Fabricantes