Triode/MOS tube/transistor/module
SHIKUES (Shike)
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VBsemi (Wei Bi)
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VBsemi (Wei Bi)
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VBsemi (Wei Bi)
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Potens (Bosheng Semiconductor)
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BLUE ROCKET (blue arrow)
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VBsemi (Wei Bi)
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SPTECH (Shenzhen Quality Super)
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Transistor Applications: Interruptible power supplies Inverters Welding converters PFC applications Converters with high switching frequencies
Descripción
DIODES (US and Taiwan)
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NPN, Vceo=20V, Ic=1A
Descripción
AGM-Semi (core control source)
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Type: N-Channel Drain-Source Voltage (Vdss): 60V Continuous Drain Current (Id): 5A Power (Pd): 1.2W On-Resistance (RDS(on)@Vgs,Id): 32mΩ@10V,5A Threshold Voltage (Vgs(th)@Id): 1.5V@250uA Gate charge (Qg@Vgs): 20nC@10V Input capacitance (Ciss@Vds): 0.98nF@20V, Vds=60V Id=5A Rds=32mΩ, operating temperature : -55℃~+150℃@(Tj)
Descripción
NCE (Wuxi New Clean Energy)
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ST (STMicroelectronics)
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WINSOK (Weishuo)
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Configuration N+P Type P-Ch VDS(V) -30 VGS(V) 20 ID(A)Max. -16 VGS(th)(v) 1.5 RDS(ON)(m?)@4.250V 20 Qg(nC )@4.5V 9.6 QgS(nC) 3.6 Qgd(nC) 4.6 Ciss(pF) 1040 Coss(pF) 180 Crss(pF) 125
Descripción
DIODES (US and Taiwan)
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VISHAY (Vishay)
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NPN, Vceo=30V, Ic=500mA, hfe=144~202
Descripción