Triode/MOS tube/transistor/module

MOS tube type: 2 N-channel Drain-source voltage (Vdss): 60V Continuous drain current (Id): 300mA Power (Pd): 280mW On-resistance (RDS(on)@Vgs,Id): 1.8Ω@10V ,300mA

P channel, -20V, -4.1A, <52mΩ@-4.5V, slightly larger than 2301 current.

This N-channel enhancement mode power MOSFET is produced using planar stripe and DMOS proprietary technology. This advanced MOSFET technology is especially suited for low on-resistance, excellent switching performance and high avalanche energy strength. These devices are suitable for use in switch-mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

NPN, Vceo=50V, Ic=2A

This PNP bipolar transistor is suitable for linear and switching applications. The device features TO-92 encapsulation and is suitable for medium power applications.

This N-channel MOSFET is produced using the advanced PowerTrench process, which is specially adapted to minimize on-resistance. This device is suitable for power management and load switching applications commonly found in notebook computers and portable battery packs.

P-channel, 30V, 4.5A, 64mΩ@10V

This N-channel MOSFET is designed to increase the overall efficiency and minimize the switching node noise of DC/DC converters, and can be used with synchronous or conventional switching PWM controllers. It is optimized for low gate charge and very low RDS(ON).

Type: N-Channel Drain-Source Voltage (Vdss): 85V Continuous Drain Current (Id): 140A Power (Pd): 227W On-Resistance (RDS(on)@Vgs,Id): 2.8mΩ@10V,20A Threshold Voltage (Vgs(th)@Id): 3.0V@250uA Gate charge (Qg@Vgs): 102nC@10V Input capacitance (Ciss@Vds): 6.89nF@50V, Vds=85V Id=140A Rds=2.8mΩ, working Temperature: -55℃~+150℃@(Tj)