Triode/MOS tube/transistor/module
Type: N-Channel Drain-Source Voltage (Vdss): 60V Continuous Drain Current (Id): 115mA Power (Pd): 225mW On-Resistance (RDS(on)@Vgs,Id): 2Ω@10V, 100mA Threshold Voltage ( Vgs(th)@Id): 2.5V@250μA
Descripción
Sinopower (large and medium)
Fabricantes
XINLUDA (Xinluda)
Fabricantes
High Voltage, High Current Darlington Transistor Array
Descripción
WILLSEMI (Will)
Fabricantes
onsemi (Ansemi)
Fabricantes
P-channel, -20V, -7.3A, 30mΩ@-4.5V
Descripción
Infineon (Infineon)
Fabricantes
Infineon (Infineon)
Fabricantes
UMW (Friends Taiwan Semiconductor)
Fabricantes
Guoxin Jiapin
Fabricantes
VBsemi (Wei Bi)
Fabricantes
DELTAMOS (Dunwei)
Fabricantes
VISHAY (Vishay)
Fabricantes
N-channel, 250V, 14A, 0.28Ω@10V
Descripción
XZT (Xinzhantong)
Fabricantes
Hongjia Orange
Fabricantes
DIODES (US and Taiwan)
Fabricantes
HUASHUO (Huashuo)
Fabricantes
DIODES (US and Taiwan)
Fabricantes
NPN, 45V, 0.1A, SOT23
Descripción