Triode/MOS tube/transistor/module
N-CH 60V 16.5A
Descripción
Littelfuse (American Littelfuse)
Fabricantes
NCE (Wuxi New Clean Energy)
Fabricantes
Ultra high voltage MOS tube
Descripción
APM (Jonway Microelectronics)
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CRMICRO (China Resources Micro)
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PJSEMI (flat crystal micro)
Fabricantes
PNP -150V -600mA
Descripción
ST (STMicroelectronics)
Fabricantes
PNP, Vceo=-50V, Ic=-150mA, hfe=25~700
Descripción
CJ (Jiangsu Changdian/Changjing)
Fabricantes
onsemi (Ansemi)
Fabricantes
onsemi (Ansemi)
Fabricantes
This N-channel MOSFET is produced using the advanced PowerTrench process, which is adapted to minimize on-resistance while maintaining excellent switching performance.
Descripción
MATSUKI (pine wood)
Fabricantes
Infineon (Infineon)
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Leiditech (Lei Mao Electronics)
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ISC (Wuxi Solid Electric)
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VISHAY (Vishay)
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Infineon (Infineon)
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VBsemi (Wei Bi)
Fabricantes
onsemi (Ansemi)
Fabricantes
This 3.0 A, 100 V, PNP bipolar power transistor is suitable for general purpose amplifier and switching applications. The BD241C (NPN), BD242B (PNP), and BD242C (PNP) are complementary devices.
Descripción