Triode/MOS tube/transistor/module
onsemi (Ansemi)
Fabricantes
This P-channel 1.8V specified MOSFET is manufactured in an advanced low voltage PowerTrench process. This product is optimized for battery management.
Descripción
VBsemi (Wei Bi)
Fabricantes
DIODES (US and Taiwan)
Fabricantes
Dual PNP, -40V, -3A
Descripción
ST (STMicroelectronics)
Fabricantes
DIOTEC (Diotec)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
MATSUKI (pine wood)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
Samwin (Semipower)
Fabricantes
HXY MOSFET (Huaxuanyang Electronics)
Fabricantes
IC(A) 0.5 VCEO(V) 25 hFE(β) 120-400 fT(MHZ) 150 VCBO(V) 40 VCE(sat)(W) 0.6 Type NPN
Descripción
VBsemi (Wei Bi)
Fabricantes
CJ (Jiangsu Changdian/Changjing)
Fabricantes
SPS (American source core)
Fabricantes
YFW (You Feng Wei)
Fabricantes
GOFORD (valley peak)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
onsemi (Ansemi)
Fabricantes
Jingyang Electronics
Fabricantes
Type(N)/ESD(Y)/VDS20(V)/VGS10(±V)/VGS(th)1.2(V)/ID6.5(A)
Descripción