Triode/MOS tube/transistor/module
TI (Texas Instruments)
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onsemi (Ansemi)
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Infineon (Infineon)
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Infineon (Infineon)
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Littelfuse (American Littelfuse)
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Littelfuse (American Littelfuse)
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RENESAS (Renesas)/IDT
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Infineon (Infineon)
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onsemi (Ansemi)
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onsemi (Ansemi)
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Low saturation voltage bipolar transistors are miniature surface mount devices with ultra-low saturation voltage and high current gain capability. These devices are designed for low-voltage, high-speed switching applications that require cost-effective, efficient energy control.
Descripción
onsemi (Ansemi)
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The FJPF13009 is a 700 V 12 A NPN silicon epitaxial planar transistor. FJPF13009 provides multiple types of h
Descripción
onsemi (Ansemi)
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This bipolar power transistor is suitable for general purpose amplifiers and low speed switching applications. MJD41C (NPN) and MJD42C (PNP) are complementary devices.
Descripción
onsemi (Ansemi)
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TOSHIBA (Toshiba)
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DIODES (US and Taiwan)
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