Triode/MOS tube/transistor/module

Fairchild's Shorted Anode Trench IGBT series utilizes advanced field stop trench and shorted anode technology to provide excellent conduction and switching performance for soft switching applications. The device can be configured in parallel and has excellent avalanche capability. The device is designed for induction heating and microwave ovens.

Automotive Power MOSFETs for compact and efficient designs mounted in 5x6mm flat lead encapsulation with high thermal performance. Wettable flank options available for enhanced optical detection. AEC-Q101 qualified MOSFETs with Production Part Approval Process (PPAP) capability for automotive applications.

SUPERFET III MOSFETs are ON Semiconductor's new family of high-voltage super-junction (SJ) MOSFETs utilizing charge-balancing technology to achieve exceptionally low on-resistance and superior performance in terms of lower gate charge. This advanced process is specifically designed to minimize conduction losses, provide excellent switching performance, and can withstand extreme dv/dt rates. Therefore, SUPERFET III MOSFETs are suitable for various power systems, enabling system miniaturization and higher energy efficiency. The optimized body diode reverse recovery performance of SUPERFET III FRFET MOSFETs can eliminate additional components and improve system reliability.

This device is designed specifically for use as a single encapsulation solution in Li-ion battery pack protection circuits and other ultra-portable applications. It features two common-drain P-channel MOSFETs for bi-directional current flow, and based on ON Semiconductor's advanced PowerTrench process with the latest MicroFET leadframe, the FDMB2308PZ minimizes PCB space and rS1S2(on).