Triode/MOS tube/transistor/module

This power MOSFET is produced using ON Semiconductor's trench technology, which is specially designed to minimize gate charge and reduce on-resistance. This device is suitable for applications with low gate charge drive or low on-resistance requirements.

This N-channel MOSFET is designed to increase the overall efficiency of DC/DC converters and can be used with synchronous switching PWM controllers or conventional switching PWM controllers. It is optimized for low gate charge, low RDS(ON) and fast switching.