Triode/MOS tube/transistor/module

These dual N- and P-channel enhancement mode power MOSFETs are produced using the advanced PowerTrench process, which is specially adapted to minimize on-resistance while maintaining excellent switching performance. Shrinks the space required to implement active-clamp topologies; enables best-in-class power density.

12V, N-Channel NexFET MOSFET™, Single LGA 0.8x1.5, 19mΩ 3-PICOSTAR -55 to 150