Triode/MOS tube/transistor/module

The FJP5555 is a 1050 V 5 A NPN silicon epitaxial planar transistor. Designed for high-speed switching applications, the FJP5555 uses industry-standard TO-220 encapsulation to provide design flexibility as well as excellent power consumption performance.

This bipolar power transistor is suitable for general purpose amplifiers and low speed switching applications. MJD41C (NPN) and MJD42C (PNP) are complementary devices.

This family of digital transistors is intended to replace a single device and its external resistor bias network. The bias resistor transistor (BRT) consists of a transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT integrates these components into one device, eliminating the need for these external components. Using BRT can reduce system cost and save board space.

This family of digital transistors is intended to replace a single device and its external resistor bias network. The bias resistor transistor (BRT) consists of a transistor and a monolithic bias network consisting of two resistors: a series base resistor and a base emitter resistor. The BRT eliminates the need for these separate components by integrating them into a single device. Using BRT can reduce system cost and save board space.