Triode/MOS tube/transistor/module

The NSVJ3910SB3 is a single N-channel junction FET providing low noise amplification (LNA) for automotive antenna applications. The device exhibits high forward transfer admittance and low noise characteristics, resulting in high ESD immunity compared to current JFETs. The device is AEC-Q101 qualified and qualified under the Production Part Approval Process (PPAP) for automotive applications.

This bipolar power transistor is suitable for general purpose amplifiers and low speed switching applications. MJD31, MJD31C (NPN) and MJD32, MJD32C (PNP) are complementary devices.

Dual PNP bipolar digital transistors consist of a transistor with a monolithic bias network consisting of two resistors: a series base resistor and a base-emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. Dual PNP bipolar digital transistors integrate these components into a single device, eliminating the need for these external components. In the UMC2NT1 series, both devices feature SOT-353 encapsulation, ideal for low power surface mount applications where board space is at a premium.