Triode/MOS tube/transistor/module
VBsemi (Wei Bi)
Fabricantes
DIODES (US and Taiwan)
Fabricantes
PNP, Vceo=-60V, Ic=-600mA
Descripción
VBsemi (Wei Bi)
Fabricantes
LGE (Lu Guang)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
Infineon (Infineon)
Fabricantes
NPN Vceo=50V, Ic=100mA, hfe=100-600
Descripción
TOSHIBA (Toshiba)
Fabricantes
HUASHUO (Huashuo)
Fabricantes
onsemi (Ansemi)
Fabricantes
ST (STMicroelectronics)
Fabricantes
Infineon (Infineon)
Fabricantes
VISHAY (Vishay)
Fabricantes
NPN, Vceo=530V, Ic=1.5A
Descripción
VBsemi (Wei Bi)
Fabricantes
MSKSEMI (Mesenco)
Fabricantes
MOS tube type: N-channel Drain-source voltage (Vdss): 60V Continuous drain current (Id): 150mA Power (Pd): 156mW On-resistance (RDS(on)@Vgs,Id): 1.6Ω@10V, 150mA
Descripción
BLUE ROCKET (blue arrow)
Fabricantes
VBsemi (Wei Bi)
Fabricantes