Triode/MOS tube/transistor/module
PNP, Vceo=-50V, Ic=-500mA
Descripción
SHIKUES (Shike)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
N-channel, 20V, 6A, 31.8mΩ@4.5V
Descripción
VBsemi (Wei Bi)
Fabricantes
onsemi (Ansemi)
Fabricantes
These families of plastic NPN and PNP power transistors are used in applications such as switching regulators, converters, and power amplifiers as general-purpose power amplification and switching, such as output and driver stages.
Descripción
TOSHIBA (Toshiba)
Fabricantes
YANGJIE (Yang Jie)
Fabricantes
onsemi (Ansemi)
Fabricantes
Infineon (Infineon)
Fabricantes
Dual N-channel, 30V, 9.7A, 15.5mΩ@9.7A, 10V
Descripción
onsemi (Ansemi)
Fabricantes
HUASHUO (Huashuo)
Fabricantes
MSKSEMI (Mesenco)
Fabricantes
Techcode (TED)
Fabricantes
Type N Drain-Source Voltage (Vdss) 40 Threshold Voltage (Vgs) 20 Continuous Drain Current (Id) 12 On-Resistance (mΩ) 9.5 Input Capacitance (Ciss) 700 Reverse Transfer Capacitance Crss (pF) 30 Gate Charge (Qg ) 10.7
Descripción
DIODES (US and Taiwan)
Fabricantes
onsemi (Ansemi)
Fabricantes
This device is suitable for medium power general purpose amplifiers and switching circuits requiring up to 1.0 A collector current. From Process 38. See BCP54 for features.
Descripción
VBsemi (Wei Bi)
Fabricantes
BLUE ROCKET (blue arrow)
Fabricantes
Cmos (Guangdong Field Effect Semiconductor)
Fabricantes
VISHAY (Vishay)
Fabricantes