Triode/MOS tube/transistor/module
Infineon (Infineon)
Fabricantes
N-channel, 200V, 5A, 600mΩ@10V
Descripción
HXY MOSFET (Huaxuanyang Electronics)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
Sinopower (large and medium)
Fabricantes
KODENSHI AUK (Photonics)
Fabricantes
N-channel, 600V, 11A, 380mA@10V
Descripción
VISHAY (Vishay)
Fabricantes
LONTEN (Longteng Semiconductor)
Fabricantes
N-channel 20V 4A
Descripción
Potens (Bosheng Semiconductor)
Fabricantes
onsemi (Ansemi)
Fabricantes
TECH PUBLIC (Taizhou)
Fabricantes
Cmos (Guangdong Field Effect Semiconductor)
Fabricantes
Slkor (Sakor Micro)
Fabricantes
CJ (Jiangsu Changdian/Changjing)
Fabricantes
NPN, Vceo=400V, Ic=200mA, hfe=100~200
Descripción
ST (STMicroelectronics)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
VISHAY (Vishay)
Fabricantes
VISHAY (Vishay)
Fabricantes
N-channel, 200V, 25A, 0.07Ω@10V
Descripción
DIODES (US and Taiwan)
Fabricantes
onsemi (Ansemi)
Fabricantes
This P-channel enhancement mode power MOSFET is produced using Fairchild Semiconductor's planar stripe and DMOS proprietary technology. This advanced MOSFET technology is designed for low on-resistance, excellent switching performance and high avalanche energy strength. These devices are suitable for switch mode power supplies, audio amplifiers, DC motor control and variable switching power supply applications.
Descripción