Triode/MOS tube/transistor/module
Infineon (Infineon)
Fabricantes
N-channel, 80V, 75A, 6mΩ@10V
Descripción
VBsemi (Wei Bi)
Fabricantes
JUNSHINE (Junshine Technology)
Fabricantes
DIODES (US and Taiwan)
Fabricantes
TECH PUBLIC (Taizhou)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
LRC (Leshan Radio)
Fabricantes
PNP+N channel
Descripción
RealChip (Shenxin Semiconductor)
Fabricantes
WINSOK (Weishuo)
Fabricantes
Configuration Single Type N-Ch VDS(V) 20 VGS(V) 12 ID(A)Max. 3 VGS(th)(v) 0.85 RDS(ON)(m?)@4.21V 60 Qg(nC)@4.5V 5.4 QgS(nC) 0.44 Qgd(nC) 1 Ciss(pF) 320 Coss(pF) 35 Crss(pF) 22
Descripción
MSKSEMI (Mesenco)
Fabricantes
Transistor Type: PNP Collector-Emitter Breakdown Voltage (Vceo): 30V Collector Current (Ic): 100mA Power (Pd): 200mW Collector Cutoff Current (Icbo): 100nA Collector-Emitter Saturation Voltage (VCE(sat) @Ic,Ib): 500mV@100mA, 5mA DC current gain (hFE@Ic,Vce): 125@2mA, 5V Characteristic frequency (fT): 100MHz Operating temperature: +150℃@(Tj)
Descripción
AGM-Semi (core control source)
Fabricantes
CRMICRO (China Resources Micro)
Fabricantes
Welding machine UPB power supply motor drive inverter VCE=1200V Ic=50A Ptot=314W 34mm replace Infineon infineon FF75R12RT4 Silan ST Magnachip 75N120 75A 1200V IGBT Modules
Descripción
XINLUDA (Xinluda)
Fabricantes
High Voltage, High Current Darlington Transistor Array
Descripción
CJ (Jiangsu Changdian/Changjing)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
TI (Texas Instruments)
Fabricantes
CSD17553Q5A N-Channel NexFET Power MOSFET, CSD17553Q5A
Descripción