Triode/MOS tube/transistor/module
ST (STMicroelectronics)
Fabricantes
N-channel, 500V, 11A, 380mΩ@10V
Descripción
DIODES (US and Taiwan)
Fabricantes
HUAYI (Hua Yi Wei)
Fabricantes
GOFORD (valley peak)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
onsemi (Ansemi)
Fabricantes
This N-channel MOSFET is produced using the advanced PowerTrench process, which is specially adapted to minimize on-resistance while maintaining excellent switching performance.
Descripción
onsemi (Ansemi)
Fabricantes
Automotive Power MOSFETs for compact and efficient designs mounted in 8x8mm flat lead encapsulation with high thermal performance. Wettable flank options available for enhanced optical detection. AEC-Q101 qualified MOSFETs with Production Part Approval Process (PPAP) capability for automotive applications.
Descripción
VISHAY (Vishay)
Fabricantes
P-channel, -30V, -5.7A, 42mΩ@-10V
Descripción
DIODES (US and Taiwan)
Fabricantes
DIODES (US and Taiwan)
Fabricantes
Infineon (Infineon)
Fabricantes
N-channel, 250V, 5A, 425mΩ@10V
Descripción
HUASHUO (Huashuo)
Fabricantes
CJ (Jiangsu Changdian/Changjing)
Fabricantes
HXY MOSFET (Huaxuanyang Electronics)
Fabricantes
Infineon (Infineon)
Fabricantes
N-channel, Vce=600V, Ic=55A, Vce(on)=1.65V
Descripción
APM (Jonway Microelectronics)
Fabricantes
PANJIT (Qiangmao)
Fabricantes
Cmos (Guangdong Field Effect Semiconductor)
Fabricantes
MOS, TO-220F, N-channel, 600V, 18A, 450mΩ (Max), 40W
Descripción
onsemi (Ansemi)
Fabricantes