Triode/MOS tube/transistor/module
ORIENTAL SEMI (Dongwei)
Fabricantes
SINO-IC (Coslight Core)
Fabricantes
Littelfuse (American Littelfuse)
Fabricantes
GL (Optics Lei)
Fabricantes
LONTEN (Longteng Semiconductor)
Fabricantes
LRC (Leshan Radio)
Fabricantes
PNP Vceo=-50V Ic=-100mA, hfe=200~475 (Ic=-2mA, Vce=-5V)
Descripción
Infineon (Infineon)
Fabricantes
N-channel, 30V, 14A, 8.7mΩ@10V
Descripción
onsemi (Ansemi)
Fabricantes
This is a 20 V P-channel power MOSFET.
Descripción
NPN, Vceo=30V, Ic=1.5A, hfe=160~320
Descripción
onsemi (Ansemi)
Fabricantes
The MJE/MJF18004G features an application-specific advanced die for switch-mode power supplies and electronic lamp ballasts operating on 220 V line.
Descripción
onsemi (Ansemi)
Fabricantes
N-Channel, PowerTrench MOSFET, 150V, 29A, 54mΩ
Descripción
JJW (Jiejiewei)
Fabricantes
onsemi (Ansemi)
Fabricantes
N groove 30V 15A
Descripción
BLUE ROCKET (blue arrow)
Fabricantes
onsemi (Ansemi)
Fabricantes
N-Channel PowerTrench MOSFET 100V, 80A, 9m?
Descripción
VBsemi (Wei Bi)
Fabricantes
CRMICRO (China Resources Micro)
Fabricantes
MSKSEMI (Mesenco)
Fabricantes
Field effect configuration: P-channel VDSS withstand voltage -20V, ID current -1.5A, RDS(ON) on-resistance 90mR@VGS -4.5V(MAX), VGS(th) turn-on voltage -0.3V to -1V
Descripción
TWGMC (Taiwan Dijia)
Fabricantes
Transistor Type: PNP Collector-Emitter Breakdown Voltage (Vceo): 25V Collector Current (Ic): 500mA Power (Pd): 300mW
Descripción