TVS fuse board level protection
High Diode (Hyde)
Fabricantes
VRWM=30V, Vc=48.4V, Ipp=4.1A
Descripción
FMS (beautiful micro)
Fabricantes
Ihold(A) 1.50 Itrip(A) 3 Vmax(V) 6 max(A) 100 TimeToTripCurrent(A) 8 Pdtyp(W) 0.8 ResistanceRmin(Ω) 0.03
Descripción
Infineon (Infineon)
Fabricantes
TI (Texas Instruments)
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HXY MOSFET (Huaxuanyang Electronics)
Fabricantes
Electrostatic discharge (ESD) protection device VRWM: 7V, IPP: 20A, VC: 18V, C: 18pF, 1 channel, bidirectional
Descripción
TVS array, 5V, 25A, Cj<10pF
Descripción
Ihold(A) 0.35 Itrip(A) 0.75 Vmax(V) 6 max(A) 40 TimeToTripCurrent(A) 8 Pdtyp(W) 0.5 ResistanceRmin(Ω) 0.2
Descripción
onsemi (Ansemi)
Fabricantes
The NIS/NIV1161 is used to protect high-speed data lines from conditions such as ESD and automotive battery shorts. Ultra-low capacitance and low ESD clamping voltage make this device ideal for protecting voltage-sensitive high-speed data lines, while low RDS(on) FETs limit distortion on signal lines. Flow-through packaging allows for simple PCB layout and the necessary matched trace lengths to maintain consistent impedance between high-speed differential lines for protocols such as USB and HDMI.
Descripción
Littelfuse (American Littelfuse)
Fabricantes
Brightking (Junyao Electronics)
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Leiditech (Lei Mao Electronics)
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YFW (You Feng Wei)
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VRMW(V) 30 BreakdownVoltage(MAX) 36.80 Test\nCurrent(mA) 1 IR@VRWM(uA) 48.4 Vc@IPP(V) 31 IPP(A) 1
Descripción
prosemi (prosemi)
Fabricantes
GOODWORK (Good Work)
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Littelfuse (American Littelfuse)
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Littelfuse (American Littelfuse)
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MSKSEMI (Mesenco)
Fabricantes
Peak reverse working voltage (1) VRWM: 4.5V VC IPP=130A tP = 8/20μs VC14V Junction capacitance Cj: 320PF to 360PF Peak pulse power PPP: 2000W
Descripción