TVS fuse board level protection
HXY MOSFET (Huaxuanyang Electronics)
Fabricantes
IPP(A) 9 VRWM(V) 5 CJ@Typ(pF) 15 Line 1 Type Bi VBR(V) 5.6 VC(V) 9.8
Descripción
ST (STMicroelectronics)
Fabricantes
MSKSEMI (Mesenco)
Fabricantes
Peak pulse power (tp=8/20s) (PPP): 350W Maximum reverse peak pulse current (IPP): 18A Maximum clamping voltage (VC): 19V Working voltage (VRWM): 8V Minimum breakdown voltage VBR): 8.5 V junction capacitance (CJ): 250PF
Descripción
BORN (Born Semiconductor)
Fabricantes
SOD-323 VRWM=3.3V ESD contact ±8KV air ±15KV for USB D+, D_ signal line anti-surge 25v, power port, etc.
Descripción
Leiditech (Lei Mao Electronics)
Fabricantes
Liown (Liown Semiconductor)
Fabricantes
Littelfuse (USA)
Fabricantes
VBR=16V,Vc=22.5V,Ipp=27.1A Unidirectional
Descripción
Brightking (Junyao Electronics)
Fabricantes
ElecSuper (Jingxin Micro)
Fabricantes
Maximum dissipated power (W) 600 Maximum offset voltage (V) 25.6 Maximum reverse current (uA) 1 Breakdown voltage Min (V) 28.5 Breakdown voltage Max (V) 31.5 Test current (mA) 1 Maximum pulse current (A) 14.7 Maximum clamping voltage (V) 41.4
Descripción
MSKSEMI (Mesenco)
Fabricantes
Ihold(A) 2.5 Itrip(A) 5 Vmax(V) 16 max(A) 100 TimeToTripCurrent(A) 8 Pdtyp(W) 1.2 ResistanceRmin(Ω) 0.015
Descripción
TECH PUBLIC (Taizhou)
Fabricantes
FUXINSEMI (Fuxin Senmei)
Fabricantes
VISHAY (Vishay)
Fabricantes
VBR=24V, Vc=33.2V, Ipp=18.4A bidirectional
Descripción
TECH PUBLIC (Taizhou)
Fabricantes
Crystal Conductor Microelectronics
Fabricantes
FMS (beautiful micro)
Fabricantes
VBR=6.4V, Vc=9.2V, Ipp=65.2A
Descripción
GOOD-ARK (Solid Technetium)
Fabricantes