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NCP5111DR2G Half Bridge IGBT MOSFET Sink 500mA Source 250mA Power MOSFET/IGBT Driver, Single Input, Half Bridge

NCP5111DR2G

Half Bridge IGBT MOSFET Sink 500mA Source 250mA Power MOSFET/IGBT Driver, Single Input, Half Bridge
Número de pieza
NCP5111DR2G
Categoría
Power Chip > Gate Driver IC
Fabricante/Marca
onsemi (Ansemi)
Encapsulación
SOIC-8
Embalaje
taping
Número de paquetes
2500
Descripción
The NCP5111 is a high voltage power gate driver driver with two outputs for direct drive of 2 N-channel power MOSFETs or IGBTs in a half-bridge configuration. It uses a bootstrap technique to ensure proper driving of the high side power switch.
Solicitud de cotización
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En stock 90532 PCS
Información del contacto
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Palabras clave deNCP5111DR2G
NCP5111DR2G Componentes electrónicos
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NCP5111DR2G Chip