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NCP51820AMNTWG Half-Bridge MOSFETs Sink 2A, Source 1A High Performance, 650 V Half-Bridge Gate Driver for GaN Power Switches

NCP51820AMNTWG

Half-Bridge MOSFETs Sink 2A, Source 1A High Performance, 650 V Half-Bridge Gate Driver for GaN Power Switches
Número de pieza
NCP51820AMNTWG
Categoría
Power Chip > Gate Driver IC
Fabricante/Marca
onsemi (Ansemi)
Encapsulación
QFN-15(4.4x4)
Embalaje
taping
Número de paquetes
4000
Descripción
The NCP51820 high-speed gate driver is designed to meet the stringent requirements of driving enhancement-mode (e?mode) and gate-inhibiting transistor (GIT) GaN HEMT power switches in offline, half-power supply topologies. The NCP51820 provides short-circuit and matched propagation delays for high-side drive, and a common-mode voltage range of −3.5 V to +650 V (typical). To fully protect the gates of the GaN power transistors from excessive voltage stress, both driver stages feature dedicated voltage regulators to accurately maintain the gate-source drive signal amplitude. The NCP51820 provides important protection features such as independent undervoltage lockout (UVLO) and IC thermal shutdown.
Solicitud de cotización
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En stock 75601 PCS
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