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NCV57001FDWR2G Isolated high current and high efficiency IGBT gate driver with internal galvanic isolation

NCV57001FDWR2G

Isolated high current and high efficiency IGBT gate driver with internal galvanic isolation
Número de pieza
NCV57001FDWR2G
Categoría
Power Chip > Gate Driver IC
Fabricante/Marca
onsemi (Ansemi)
Encapsulación
SOIC-16-300mil
Embalaje
taping
Número de paquetes
1000
Descripción
Solicitud de cotización
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En stock 91226 PCS
Información del contacto
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NCV57001FDWR2G Chip