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NGTD23T120F2WP Trench Field Stop 1.2kV IGBT 1200V 25A FS2 Die

NGTD23T120F2WP

Trench Field Stop 1.2kV IGBT 1200V 25A FS2 Die
Número de pieza
NGTD23T120F2WP
Categoría
Transistor/MOS tube/transistor > IGBT tube/module
Fabricante/Marca
onsemi (Ansemi)
Encapsulación
SMD
Embalaje
bagged
Número de paquetes
1
Descripción
Utilizing a durable and cost-effective field-stop II trench structure, this insulated-gate bipolar transistor (IGBT) provides excellent performance in demanding switching applications and also offers low on-state voltage and lowest switching losses .
Solicitud de cotización
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En stock 80737 PCS
Información del contacto
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Palabras clave deNGTD23T120F2WP
NGTD23T120F2WP Componentes electrónicos
NGTD23T120F2WP Ventas
NGTD23T120F2WP Proveedor
NGTD23T120F2WP Distribuidor
NGTD23T120F2WP Tabla de datos
NGTD23T120F2WP Fotos
NGTD23T120F2WP Precio
NGTD23T120F2WP Oferta
NGTD23T120F2WP El precio más bajo
NGTD23T120F2WP Buscar
NGTD23T120F2WP Adquisitivo
NGTD23T120F2WP Chip