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IPD122N10N3GBTMA1
Product Overview
Category
The IPD122N10N3GBTMA1 belongs to the category of power MOSFETs.
Use
It is used as a high-performance switching device in various electronic circuits and power applications.
Characteristics
- High voltage capability
- Low on-resistance
- Fast switching speed
- Low gate charge
- Enhanced ruggedness
Package
The IPD122N10N3GBTMA1 is typically available in a TO-252 package.
Essence
This MOSFET is essential for efficient power management and control in electronic systems.
Packaging/Quantity
It is commonly packaged in reels with quantities varying based on manufacturer specifications.
Specifications
- Drain-Source Voltage (VDS): 100V
- Continuous Drain Current (ID): 120A
- On-Resistance (RDS(on)): 3.3mΩ
- Gate-Source Voltage (VGS): ±20V
- Total Gate Charge (Qg): 60nC
- Operating Temperature Range: -55°C to 175°C
Detailed Pin Configuration
The IPD122N10N3GBTMA1 typically has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)
Functional Features
- High current-carrying capability
- Low conduction losses
- Suitable for high-frequency applications
- Enhanced thermal performance
Advantages
- Efficient power handling
- Reduced power dissipation
- Improved system reliability
- Suitable for high-power applications
Disadvantages
- Higher cost compared to standard MOSFETs
- Sensitive to electrostatic discharge (ESD)
Working Principles
The IPD122N10N3GBTMA1 operates based on the principles of field-effect transistors, where the application of a voltage at the gate terminal controls the flow of current between the drain and source terminals.
Detailed Application Field Plans
This MOSFET is widely used in: - Switch-mode power supplies - Motor control systems - Electric vehicles - Renewable energy systems - Industrial automation
Detailed and Complete Alternative Models
Some alternative models to the IPD122N10N3GBTMA1 include: - IPD123N15N3G - IPD124N08N3G - IPD125N06N3G - IPD126N04N3G
In conclusion, the IPD122N10N3GBTMA1 is a high-performance power MOSFET with excellent characteristics suitable for a wide range of power applications, despite its few disadvantages. Its working principles and detailed application field plans showcase its versatility and importance in modern electronic systems.
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Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de IPD122N10N3GBTMA1 en soluciones técnicas
What is the maximum drain-source voltage of IPD122N10N3GBTMA1?
- The maximum drain-source voltage of IPD122N10N3GBTMA1 is 100V.
What is the continuous drain current rating of IPD122N10N3GBTMA1?
- The continuous drain current rating of IPD122N10N3GBTMA1 is 120A.
What is the on-state resistance (RDS(on)) of IPD122N10N3GBTMA1?
- The on-state resistance (RDS(on)) of IPD122N10N3GBTMA1 is typically 3.5mΩ.
Can IPD122N10N3GBTMA1 be used in automotive applications?
- Yes, IPD122N10N3GBTMA1 is suitable for automotive applications.
What is the operating temperature range of IPD122N10N3GBTMA1?
- The operating temperature range of IPD122N10N3GBTMA1 is -55°C to 175°C.
Does IPD122N10N3GBTMA1 have built-in protection features?
- Yes, IPD122N10N3GBTMA1 includes built-in overcurrent and thermal protection.
What type of package does IPD122N10N3GBTMA1 come in?
- IPD122N10N3GBTMA1 is available in a TO-252-3 package.
Is IPD122N10N3GBTMA1 suitable for high-frequency switching applications?
- Yes, IPD122N10N3GBTMA1 is designed for high-frequency switching.
What gate-source voltage is required to fully enhance IPD122N10N3GBTMA1?
- A gate-source voltage of 10V is typically required to fully enhance IPD122N10N3GBTMA1.
Can IPD122N10N3GBTMA1 be used in power supply and motor control applications?
- Yes, IPD122N10N3GBTMA1 is well-suited for power supply and motor control applications.