Diode/Bridge Rectifier

60V 3A VF=0.7V@3A

VR/100V Silicon carbideIR/1mA Silicon carbideVF/0.75V Silicon carbideIO/5A Silicon carbideTrr/20ns

The Schottky diode uses the Schottky diode potential barrier principle and adopts a large-area metal-silicon power diode. The Schottky diode's advanced geometry employs chromium barrier metal, oxide passivation, and epitaxy with metal-covered contacts. This is suitable for low-voltage high-frequency inverters, freewheeling diodes and polarity protection diodes.

I(AV) Silicon carbide 30.0 VRRM(V) 100 IFsM(A) 220 VFM(V) 0.63 VFMI(AV)(A) 30 IRM@VRRM(μA) 8

BAT54CWT-F2-0000HF

200V,1A,VF=1.3V@1A

IF(A) 0.2 VR(V) 40 VF(V) 1 IR(uA) 200 IFSM(A) 0.6

IF(A) 0.2 VR(V) 40 VF(V) 1 IR(uA) 200 IFSM(A) 0.6

Maximum Dissipation\nPower 0.225 Maximum Reverse\nPeak Voltage (V) 70 Maximum Reverse\nPeak Voltage IR (uA) 100 Maximum Forward\nVoltage (V) 0.715 Maximum Forward\nVoltage IF (mA) 1 Maximum reverse \n current IR (uA) 2.5 Maximum reverse \n current VR (V) 70 Maximum reverse recovery time (ns) 6