Diode/Bridge Rectifier

VR=1000V IO=1A VF=1.1V@1A

40V, 5A, VF=0.55V@5A

Diode Configuration: Independent Power: 225mW DC Reverse Withstand Voltage (Vr): 75V Average Rectified Current (Io): 150mA Forward Voltage Drop (Vf): 1.25V@150mA Reverse Recovery Time (trr): 6ns

This switching diode is suitable for high speed switching applications.

The MMSD301T1 and MMSD701T1 devices are spin-offs of our MMBD301LT1 and MMBD701LT1 SOT-23 devices. Schottky diodes are primarily used in energy efficient UHF and VHF detector applications. It can be easily applied to many other fast switching RF and digital applications.

Diode configuration: Standalone DC reverse withstand voltage (Vr): 20V Average rectified current (Io): 500mA Forward voltage drop (Vf): 390mV@500mA Reverse current (Ir): 250uA@20V

Diode configuration: Standalone DC reverse withstand voltage (Vr): 20V Average rectified current (Io): 500mA Forward voltage drop (Vf): 390mV@500mA Reverse current (Ir): 250uA@20V

1700V ,1Ω Silicon carbide MOSFET

1700V ,1Ω Silicon carbide MOSFET

1000V,4A