Triode/MOS tube/transistor/module
AGM-Semi (core control source)
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VBsemi (Wei Bi)
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VISHAY (Vishay)
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N-channel, 30V, 40A, 0.0057Ω@10V
Descripción
LONTEN (Longteng Semiconductor)
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Voltage VDSS500V, conduction resistance Rds1.5 ohms, charge Qg24nC, current ID5A
Descripción
onsemi (Ansemi)
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MOSFET, small signal, 500 mA, 60 V
Descripción
Potens (Bosheng Semiconductor)
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onsemi (Ansemi)
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Automotive power MOSFETs for low power applications. 50V, 200mA, 3.5 Ohm, Single N-Channel, SOT-23, Logic Level, Pb-Free, RoHS Compliant. AEC-Q101 qualified MOSFETs and Production Part Approval Process (PPAP) compliant for automotive applications.
Descripción
CJ (Jiangsu Changdian/Changjing)
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VBsemi (Wei Bi)
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NCE (Wuxi New Clean Energy)
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onsemi (Ansemi)
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600V-20A three-phase IGBT inverter bridge, Motion SPM 3 series products
Descripción
MSKSEMI (Mesenco)
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Type: N-channel Drain-source voltage (Vdss): 30V Continuous drain current (Id): 20A On-resistance (RDS(on)@Vgs,Id): 25mΩ@10V, 38mΩ@4.5V Threshold voltage (Vgs(th )@Id): 1.0V-2.5@250μA
Descripción
VBsemi (Wei Bi)
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ST (STMicroelectronics)
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Wuxi Unisplendour
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SPS (American source core)
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