Triode/MOS tube/transistor/module
onsemi (Ansemi)
Fabricantes
SPS (American source core)
Fabricantes
Ruichips (Ruijun Semiconductor)
Fabricantes
8205 double N-channel MOS transistor, 20V/6A, 18 milliohm low resistance product.
Descripción
N-channel, Vce=650V, Ic=75A
Descripción
VISHAY (Vishay)
Fabricantes
N-channel, 12V, 4A, 0.026Ω@4.5V
Descripción
TECH PUBLIC (Taizhou)
Fabricantes
CJ (Jiangsu Changdian/Changjing)
Fabricantes
SILAN (Silan Micro)
Fabricantes
MSKSEMI (Mesenco)
Fabricantes
Triode Transistor Type: NPN Collector-Emitter Breakdown Voltage (Vceo): 305V Collector Current (Ic): 200mA Power (Pd): 500mW DC Current Gain (hFE@Ic,Vce): 100@10mA,10V 100-300 NPN ,Vceo=305V,Ic=200mA silk screen 1D
Descripción
YONGYUTAI (Yongyutai)
Fabricantes
Shanghai Chaozhi
Fabricantes
BL (Shanghai Belling)
Fabricantes
ST (STMicroelectronics)
Fabricantes
N-channel, 900V, 20A, 0.21Ω@10V
Descripción
XZT (Xinzhantong)
Fabricantes
NPN, Vceo=60V, Ic=3A, hfe=100~200
Descripción
VBsemi (Wei Bi)
Fabricantes
GL (Optics Lei)
Fabricantes
LRC (Leshan Radio)
Fabricantes