Triode/MOS tube/transistor/module

N-CH

1200v/200a 3.2Vce

P-channel, -30V, -11.6A, 12.5mΩ@-10V

Semiconductor transistor field effect transistor MOS tube, DFN-8 5*6, N channel, withstand voltage: 30V, current: 120A, 10V internal resistance (Max): 0.0033Ω, 4.5V internal resistance (Max): 0.0075Ω, power : 50W

Configuration Single Type P-Ch VDS(V) -15 VGS(V) 12 ID(A)Max. -5 VGS(th)(v) -0.7 RDS(ON)(m?)@4.37V 28 Qg(nC) @4.5V 7.8 QgS(nC) 1.2 Qgd(nC) 1.6 Ciss(pF) 1440 Coss(pF) 280 Crss(pF) 190

Type: P-Channel Drain-Source Voltage (Vdss): 20V Continuous Drain Current (Id): 2A Power (Pd): 1.56W On-Resistance (RDS(on)@Vgs,Id): 110Ω@-4.5V,- 2A threshold voltage (Vgs(th)@Id): -1.3V@250uA

N-channel, 30V, 13A, 11.5mΩ@10V