Triode/MOS tube/transistor/module
Infineon (Infineon)
Fabricantes
P-channel, 30V, 2.3A, 165mΩ@2.3A, 10V
Descripción
DIODES (US and Taiwan)
Fabricantes
HUASHUO (Huashuo)
Fabricantes
TECH PUBLIC (Taizhou)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
DIODES (US and Taiwan)
Fabricantes
UMW (Friends Taiwan Semiconductor)
Fabricantes
onsemi (Ansemi)
Fabricantes
This family of digital transistors is intended to replace a device and its external resistor bias network. The Bias Resistor Transistor (BRT) consists of a transistor and a monolithic bias network consisting of two resistors; a series base resistor and a base emitter resistor. The BRT integrates these components into one device, eliminating the need for these external components. Using BRT can reduce both system cost and board space.
Descripción
N-channel, 60V, 5A
Descripción
MSKSEMI (Mesenco)
Fabricantes
MOS tube type: 2 N-channel Drain-source voltage (Vdss): 55V Continuous drain current (Id): 300mA Power (Pd): 280mW On-resistance (RDS(on)@Vgs,Id): 1.2Ω@10V ,300mA
Descripción
YANGJIE (Yang Jie)
Fabricantes
2SA812-M5-F2-0000HF
Descripción
HUAYI (Hua Yi Wei)
Fabricantes
SPS (American source core)
Fabricantes
HUASHUO (Huashuo)
Fabricantes
LONTEN (Longteng Semiconductor)
Fabricantes
LONTEN (Longteng Semiconductor)
Fabricantes
APEC (Fuding)
Fabricantes