Triode/MOS tube/transistor/module
DIODES (US and Taiwan)
Fabricantes
ST (STMicroelectronics)
Fabricantes
Slkor (Sakor Micro)
Fabricantes
onsemi (Ansemi)
Fabricantes
Infineon (Infineon)
Fabricantes
N-channel, 60V, 2.6A, 90mΩ@10V
Descripción
LONTEN (Longteng Semiconductor)
Fabricantes
YANGJIE (Yang Jie)
Fabricantes
MMST5551-F2-0000HF
Descripción
SILAN (Silan Micro)
Fabricantes
CRMICRO (China Resources Micro)
Fabricantes
onsemi (Ansemi)
Fabricantes
This N-channel logic level MOSFET is produced using the advanced PowerTrench process, which is specially adapted to minimize on-resistance while maintaining excellent switching performance. These devices are ideal for low-voltage and battery-powered applications requiring low in-line power loss and fast switching.
Descripción
ST (STMicroelectronics)
Fabricantes
Infineon (Infineon)
Fabricantes
N-channel 60V 120A
Descripción
Infineon (Infineon)
Fabricantes
Shanghai Chaozhi
Fabricantes
GOODWORK (Good Work)
Fabricantes
Infineon (Infineon)
Fabricantes
APEC (Fuding)
Fabricantes
HXY MOSFET (Huaxuanyang Electronics)
Fabricantes
P-channel, VDSS withstand voltage 50V, ID current 100mA, RDON on-resistance 5R@VGS 10V(MAX), VGS(th) turn-on voltage 0.8-2.0V,
Descripción