Triode/MOS tube/transistor/module
DIODES (US and Taiwan)
Fabricantes
LRC (Leshan Radio)
Fabricantes
NPN Vceo=30V Ic=300mA
Descripción
DIODES (US and Taiwan)
Fabricantes
NPN, Vceo=400V, Ic=1.5A, hfe=21~27
Descripción
Ultra high voltage MOS tube
Descripción
TECH PUBLIC (Taizhou)
Fabricantes
HUASHUO (Huashuo)
Fabricantes
JSMSEMI (Jiesheng Micro)
Fabricantes
DIODES (US and Taiwan)
Fabricantes
onsemi (Ansemi)
Fabricantes
This NPN bipolar transistor is suitable for linear and switching applications. The device features SC-59 encapsulation and is suitable for low power surface mount applications.
Descripción
UMW (Friends Taiwan Semiconductor)
Fabricantes
UMW (Friends Taiwan Semiconductor)
Fabricantes
DIODES (US and Taiwan)
Fabricantes
NPN, 300V, 500mA
Descripción
DIODES (US and Taiwan)
Fabricantes
DIODES (US and Taiwan)
Fabricantes
ST (STMicroelectronics)
Fabricantes
8NPN,50V,500mA
Descripción